BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. II Extension for repetitive pulse operation. Publication thereof does not convey nor imply datwsheet license under patent or other industrial or intellectual property rights. July 2 Rev 1.
Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. Stress above one or more of the limiting values may cause permanent damage to the device.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper dataxheet or sale. Typical DC current gain. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.
High collectorbase voltagevcbov high speed switching. July 5 Rev 1. C I Region of permissible DC operation. Refer to mounting instructions for F-pack envelopes. Application information Where application information is given, it is advisory and does not form part of the specification. Forward bias safe operating area.
Buaf transistor equivalent substitute crossreference search. The information presented in this document does not form part of any quotation or contract, it bk2508df believed to be accurate and reliable and may be changed without notice.
Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. July 1 Rev 1.
July 7 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Buaf datasheet, equivalent, cross reference search.
Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. This data sheet contains final product specifications. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Silicon diffused power transistor buaf datasheet catalog. No liability will be accepted by the publisher for any consequence of its use.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Typical collector storage and fall time. This data sheet contains target or goal specifications for product development.
Isc Silicon NPN Power Transistor
Typical collector-emitter bu2508fd voltage. Budf philips semiconductors, budf datasheet. C 1 Turn-off current. Budf datashet equivalent substitute crossreference search. Exposure to limiting values for extended periods may affect device reliability. Typical base-emitter saturation voltage. July 6 Rev 1. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.
SOT; The seating plane is electrically isolated from all terminals.